Ulf Lindefelt: search on Z-Library

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1

Theoretical Study of Cubic Polytype Inclusions in 4H-SiC

Iwata, Hisaomi, Lindefelt, Ulf, Öberg, Sven, Briddon, Patrick R.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 326 KB

2002

2

Quasiband crystal-field method for calculating the electronic structure of localized defects in solids

Lindefelt, Ulf, Zunger, Alex

Journal:

Physical Review B

Year:

1982

Language:

english

File:

PDF, 2.23 MB

english, 1982

3

Changes in the Exciton-Related Photoluminescence of 4H- and 6H-SiC Induced by Uniaxial Stress

Ivanov, I.G., Lindefelt, Ulf, Henry, Anne, Egilsson, T., Kordina, Olle, Janzén, Erik

Journal:

Materials Science Forum

Year:

1998

File:

PDF, 354 KB

1998

4

Dynamic and Steady-State Description of Incomplete Ionization in 4H-SiC Power Diodes under Turn-Off

Martinez, A., Lindefelt, Ulf

Journal:

Materials Science Forum

Year:

2000

File:

PDF, 332 KB

2000

5

Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes

Bergman, J. Peder, Lendenmann, H., Nilsson, Per Åke, Lindefelt, Ulf, Skytt, P.

Journal:

Materials Science Forum

Year:

2001

File:

PDF, 406 KB

2001

6

Basis sets for the study of point defects in solids using green's-function methods

Ulf Lindefelt, Sokrates T. Pantelides

Journal:

Solid State Communications

Year:

1979

Language:

english

File:

PDF, 341 KB

english, 1979

7

A new type of quantum wells: stacking faults in silicon carbide

Hisaomi Iwata, Ulf Lindefelt, Sven Öberg, Patrick R. Briddon

Journal:

Microelectronics Journal

Year:

2003

Language:

english

File:

PDF, 157 KB

english, 2003

8

Electron-phonon and electron-defect scattering rates in semiconducting zigzag carbon nanotubes

Kannan Thiagarajan, Ulf Lindefelt

Journal:

physica status solidi (c)

Year:

2012

Language:

english

File:

PDF, 264 KB

english, 2012

9

Interband tunneling description of holes in Wurtzite GaN at high electric fields

Mats Hjelm, Antonio Martinez, Hans-Erik Nilsson, Ulf Lindefelt

Journal:

Journal of Computational Electronics

Year:

2007

Language:

english

File:

PDF, 328 KB

english, 2007

10

High-field electron transport in semiconducting zigzag carbon nanotubes

Thiagarajan, Kannan, Lindefelt, Ulf

Journal:

Year:

2012

Language:

english

File:

PDF, 521 KB

english, 2012

11

Theoretical study of planar defects in silicon carbide

Iwata, Hisaomi, Lindefelt, Ulf, berg, Sven, Briddon, Patrick R

Journal:

Journal of Physics Condensed Matter

Year:

2002

Language:

english

File:

PDF, 307 KB

english, 2002

12

polytypes investigated by an ab initio supercell method

Lindefelt, Ulf, Iwata, Hisaomi, Öberg, Sven, Briddon, Patrick R.

Journal:

Physical Review B

Year:

2003

Language:

english

File:

PDF, 344 KB

english, 2003

13

Localized electronic states around stacking faults in silicon carbide

Iwata, Hisaomi, Lindefelt, Ulf, Öberg, Sven, Briddon, Patrick R.

Journal:

Physical Review B

Year:

2001

Language:

english

File:

PDF, 120 KB

english, 2001

14

Nonharmonic oscillations of nanosized cantilevers due to quantum-size effects

Olsen, Martin, Gradin, Per, Lindefelt, Ulf, Olin, Håkan

Journal:

Physical Review B

Year:

2010

Language:

english

File:

PDF, 179 KB

english, 2010

15

Cubic polytype inclusions in 4H–SiC

Iwata, Hisaomi, Lindefelt, Ulf, Öberg, Sven, Briddon, Patrick R.

Journal:

Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 452 KB

english, 2003

16

Evaluation of Auger Recombination Rate in 4H-SiC

Galeckas, Augustinas, Linnros, Jan, Grivickas, Vytautas, Lindefelt, Ulf, Hallin, Christer

Journal:

Materials Science Forum

Year:

1998

File:

PDF, 355 KB

1998

17

Theoretical Calculation of Stacking Fault Energies in Silicon Carbide

Iwata, Hisaomi, Lindefelt, Ulf, Öberg, Sven, Briddon, Patrick R.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 266 KB

2002

18

Electronic Properties of Stacking Faults in 15R-SiC

Iwata, Hisaomi, Lindefelt, Ulf, Öberg, Sven, Briddon, Patrick R.

Journal:

Materials Science Forum

Year:

2003

Language:

english

File:

PDF, 186 KB

english, 2003

19

Insight into the Degradation Phenomenon in SiC Devices from Ab Initio Calculations of the Electronic Structure of Single and Multiple Stacking Faults

Lindefelt, Ulf, Iwata, Hisaomi, Öberg, Sven, Briddon, Patrick R.

Journal:

Materials Science Forum

Year:

2003

Language:

english

File:

PDF, 586 KB

english, 2003

20

Electronic Localization around Stacking Faults in Silicon Carbide

Iwata, Hisaomi, Lindefelt, Ulf, Öberg, Sven, Briddon, Patrick R.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 288 KB

2002

21

Effective Mass of Electrons in Quantum-Well-Like Stacking-Fault Gap States in Silicon Carbide

Iwata, Hisaomi, Lindefelt, Ulf, Öberg, Sven, Briddon, Patrick R.

Journal:

Materials Science Forum

Year:

2003

Language:

english

File:

PDF, 189 KB

english, 2003

22

Scattering Probabilities for Multiband Hole States at High Electric Fields and High Collision Rates in 4H-SiC

Martinez, A., Hjelm, M., Nilsson, H.-E., Lindefelt, Ulf

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 358 KB

english, 2004

23

Stacking Fault – Stacking Fault Interactions and Cubic Inclusions in 6H-SiC: an Ab Initio Study

Iwata, Hisaomi, Lindefelt, Ulf, Öberg, Sven, Briddon, Patrick R.

Journal:

Materials Science Forum

Year:

2003

Language:

english

File:

PDF, 166 KB

english, 2003

24

Theoretical Treatments of Band Edges in SiC Polytypes at High Carrier Concentrations

Lindefelt, Ulf, Persson, C.

Journal:

Materials Science Forum

Year:

2000

File:

PDF, 480 KB

2000

25

Electronic Structure of Twin Boundaries in 3C-SiC, Si and Diamond

Iwata, Hisaomi, Lindefelt, Ulf, Öberg, Sven, Briddon, Patrick R.

Journal:

Materials Science Forum

Year:

2003

Language:

english

File:

PDF, 216 KB

english, 2003

26

Doping-Related Strain in n-Doped 4H-SiC Crystals

Jacobsson, Henrik, Birch, Jens, Lindefelt, Ulf, Hallin, Christer, Henry, Anne, Yakimova, Rositza, Janzén, Erik

Journal:

Materials Science Forum

Year:

2003

Language:

english

File:

PDF, 2.10 MB

english, 2003

27

Investigation of Excess Carrier Distributions in 4H-SiC Power Diodes under Static Conditions and Turn-On

Tornblad, O., Galeckas, Augustinas, Linnros, Jan, Breitholtz, Bo, Lindefelt, Ulf

Journal:

Materials Science Forum

Year:

1998

File:

PDF, 323 KB

1998

28

Free Carrier Diffusion in 4H-SiC

Grivickas, Paulius, Martinez, A., Mikulskas, I., Grivickas, Vytautas, Tomašiunas, R., Linnros, Jan, Lindefelt, Ulf

Journal:

Materials Science Forum

Year:

2001

File:

PDF, 359 KB

2001

29

Ionization Rates and Critical Fields in 4H SiC Junction Devices

Konstantinov, Andrey O., Wahab, Qamar-ul, Nordell, Nils, Lindefelt, Ulf

Journal:

Materials Science Forum

Year:

1998

File:

PDF, 333 KB

1998

30

Calculated Density of States and Carrier Concentration in 4H- and 6H-SiC

Persson, C., Lindefelt, Ulf

Journal:

Materials Science Forum

Year:

1998

File:

PDF, 307 KB

1998

31

A Study of Band to Band Tunneling with Application to High-Field Transport in Hexagonal SiC Polytypes

Martinez, A., Nilsson, H.-E., Lindefelt, Ulf

Journal:

Materials Science Forum

Year:

2001

File:

PDF, 305 KB

2001

32

The influence of emitter properties on the heat generation in SiC and Si PIN diodes under forward conduction

Tornblad, Olof, Breitholtz, Bo, Östling, Mikael, Lindefelt, Ulf

Journal:

Physica Scripta

Year:

1994

Language:

english

File:

PDF, 585 KB

english, 1994

33

Effects of Vacancies on the Electron Transport in Semiconducting Zigzag Carbon Nanotubes

Thiagarajan, Kannan, Lindefelt, Ulf

Journal:

Journal of Computational and Theoretical Nanoscience

Year:

2015

Language:

english

File:

PDF, 524 KB

english, 2015

34

Corrigendum: High-field electron transport in semiconducting zigzag carbon nanotubes

Thiagarajan, Kannan, Lindefelt, Ulf

Journal:

Year:

2013

Language:

english

File:

PDF, 154 KB

english, 2013